FGA60N65SMD

FGA60N65SMD

Manufacturer

Sanyo Semiconductor/ON Semiconductor

Product Category

Transistors - IGBTs - Single

Description

IGBT FIELD STOP 650V 120A TO3P

Specifications

  • Series
    -
  • Package
    Tube
  • Part Status
    Active
  • IGBT Type
    Field Stop
  • Voltage - Collector Emitter Breakdown (Max)
    650 V
  • Current - Collector (Ic) (Max)
    120 A
  • Current - Collector Pulsed (Icm)
    180 A
  • Vce(on) (Max) @ Vge, Ic
    2.5V @ 15V, 60A
  • Power - Max
    600 W
  • Switching Energy
    1.54mJ (on), 450µJ (off)
  • Input Type
    Standard
  • Gate Charge
    189 nC
  • Td (on/off) @ 25°C
    18ns/104ns
  • Test Condition
    400V, 60A, 3Ohm, 15V
  • Reverse Recovery Time (trr)
    47 ns
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Package / Case
    TO-3P-3, SC-65-3
  • Supplier Device Package
    TO-3P

FGA60N65SMD Request a Quote

In Stock 7976
Quantity:
Unit Price (Reference Price):
4.21000
Target price:
Total:4.21000

Datasheet