HGTG11N120CND

HGTG11N120CND

Manufacturer

Sanyo Semiconductor/ON Semiconductor

Product Category

Transistors - IGBTs - Single

Description

IGBT NPT 1200V 43A TO247-3

Specifications

  • Series
    -
  • Package
    Tube
  • Part Status
    Not For New Designs
  • IGBT Type
    NPT
  • Voltage - Collector Emitter Breakdown (Max)
    1200 V
  • Current - Collector (Ic) (Max)
    43 A
  • Current - Collector Pulsed (Icm)
    80 A
  • Vce(on) (Max) @ Vge, Ic
    2.4V @ 15V, 11A
  • Power - Max
    298 W
  • Switching Energy
    950µJ (on), 1.3mJ (off)
  • Input Type
    Standard
  • Gate Charge
    100 nC
  • Td (on/off) @ 25°C
    23ns/180ns
  • Test Condition
    960V, 11A, 10Ohm, 15V
  • Reverse Recovery Time (trr)
    70 ns
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Supplier Device Package
    TO-247-3

HGTG11N120CND Request a Quote

In Stock 9409
Quantity:
Unit Price (Reference Price):
3.55000
Target price:
Total:3.55000

Datasheet