MJD122-1G

MJD122-1G

Manufacturer

Sanyo Semiconductor/ON Semiconductor

Product Category

Transistors - Bipolar (BJT) - Single

Description

TRANS NPN DARL 100V 8A DPAK

Specifications

  • Series
    -
  • Package
    Tube
  • Part Status
    Active
  • Transistor Type
    NPN - Darlington
  • Current - Collector (Ic) (Max)
    8 A
  • Voltage - Collector Emitter Breakdown (Max)
    100 V
  • Vce Saturation (Max) @ Ib, Ic
    4V @ 80mA, 8A
  • Current - Collector Cutoff (Max)
    10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    1000 @ 4A, 4V
  • Power - Max
    1.75 W
  • Frequency - Transition
    4MHz
  • Operating Temperature
    -65°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package
    DPAK

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In Stock 27877
Quantity:
Unit Price (Reference Price):
0.37100
Target price:
Total:0.37100