NXH50C120L2C2ESG

NXH50C120L2C2ESG

Manufacturer

Sanyo Semiconductor/ON Semiconductor

Product Category

Transistors - IGBTs - Modules

Description

IGBT MODULE, CIB 1200 V, 50 A IG

Specifications

  • Series
    -
  • Package
    Tube
  • Part Status
    Active
  • IGBT Type
    -
  • Configuration
    Three Phase Inverter with Brake
  • Voltage - Collector Emitter Breakdown (Max)
    1200 V
  • Current - Collector (Ic) (Max)
    50 A
  • Power - Max
    20 mW
  • Vce(on) (Max) @ Vge, Ic
    2.4V @ 15V, 50A
  • Current - Collector Cutoff (Max)
    250 µA
  • Input Capacitance (Cies) @ Vce
    11.897 nF @ 20 V
  • Input
    Three Phase Bridge Rectifier
  • NTC Thermistor
    Yes
  • Operating Temperature
    -40°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Package / Case
    26-PowerDIP Module (1.199", 47.20mm)
  • Supplier Device Package
    26-DIP

NXH50C120L2C2ESG Request a Quote

In Stock 1790
Quantity:
Unit Price (Reference Price):
59.50000
Target price:
Total:59.50000