Specifications

• Series
  -
• Package
  Tray
• Part Status
  Active
• Diode Type
  Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max)
  1200 V
• Current - Average Rectified (Io)
  61A (DC)
• Voltage - Forward (Vf) (Max) @ If
  1.75 V @ 40 A
• Speed
  No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr)
  0 ns
• Current - Reverse Leakage @ Vr
  200 µA @ 1200 V
• Capacitance @ Vr, F
  2250pf @ 1V, 100kHz
• Mounting Type
  Surface Mount
• Package / Case
  Die
• Supplier Device Package
  Die
• Operating Temperature - Junction
  -55°C ~ 175°C