UNR421K00A

UNR421K00A

Manufacturer

Panasonic

Product Category

Transistors - Bipolar (BJT) - Single, Pre-Biased

Description

TRANS PREBIAS NPN 300MW NS-B1

Specifications

  • Series
    -
  • Package
    Cut Tape (CT)Tape & Box (TB)
  • Part Status
    Obsolete
  • Transistor Type
    NPN - Pre-Biased
  • Current - Collector (Ic) (Max)
    100 mA
  • Voltage - Collector Emitter Breakdown (Max)
    50 V
  • Resistor - Base (R1)
    10 kOhms
  • Resistor - Emitter Base (R2)
    4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    20 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max)
    500nA
  • Frequency - Transition
    150 MHz
  • Power - Max
    300 mW
  • Mounting Type
    Through Hole
  • Package / Case
    3-SSIP
  • Supplier Device Package
    NS-B1

UNR421K00A Request a Quote

In Stock 29504
Quantity:
Unit Price (Reference Price):
0.35000
Target price:
Total:0.35000

Datasheet