RM2020ES9

RM2020ES9

Manufacturer

Rectron USA

Product Category

Transistors - FETs, MOSFETs - Arrays

Description

MOSFET N&P-CH 20V SOT363

Specifications

  • Series
    -
  • Package
    Tape & Reel (TR)
  • Part Status
    Active
  • FET Type
    N and P-Channel
  • FET Feature
    Standard
  • Drain to Source Voltage (Vdss)
    20V
  • Current - Continuous Drain (Id) @ 25°C
    750mA (Ta), 800mA (Ta)
  • Rds On (Max) @ Id, Vgs
    1.2Ohm @ 500mA, 4.5V, 380mOhm @ 650mA, 4.5V
  • Vgs(th) (Max) @ Id
    1V @ 250µA, 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    1.8pC @ 10V, 750pC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds
    87pF @ 10V, 120pF @ 16V
  • Power - Max
    150mW (Ta), 800mW (Ta)
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Supplier Device Package
    SOT-363

RM2020ES9 Request a Quote

In Stock 182680
Quantity:
Unit Price (Reference Price):
0.05500
Target price:
Total:0.05500