RJH60D5BDPQ-E0#T2

RJH60D5BDPQ-E0#T2

Manufacturer

Renesas Electronics America

Product Category

Transistors - IGBTs - Single

Description

IGBT 600V 75A 200W TO-247

Specifications

  • Series
    -
  • Package
    Tube
  • Part Status
    Active
  • IGBT Type
    Trench
  • Voltage - Collector Emitter Breakdown (Max)
    600 V
  • Current - Collector (Ic) (Max)
    75 A
  • Current - Collector Pulsed (Icm)
    -
  • Vce(on) (Max) @ Vge, Ic
    2.2V @ 15V, 37A
  • Power - Max
    200 W
  • Switching Energy
    400µJ (on), 810µJ (off)
  • Input Type
    Standard
  • Gate Charge
    78 nC
  • Td (on/off) @ 25°C
    50ns/130ns
  • Test Condition
    300V, 37A, 5Ohm, 15V
  • Reverse Recovery Time (trr)
    25 ns
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Supplier Device Package
    TO-247

RJH60D5BDPQ-E0#T2 Request a Quote

In Stock 10649
Quantity:
Unit Price (Reference Price):
5.12000
Target price:
Total:5.12000

Datasheet