2SD1816T-E

2SD1816T-E

Manufacturer

Rochester Electronics

Product Category

Transistors - Bipolar (BJT) - Single

Description

TRANS NPN 100V 4A TP

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Obsolete
  • Transistor Type
    NPN
  • Current - Collector (Ic) (Max)
    4 A
  • Voltage - Collector Emitter Breakdown (Max)
    100 V
  • Vce Saturation (Max) @ Ib, Ic
    400mV @ 200mA, 2A
  • Current - Collector Cutoff (Max)
    1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 500mA, 5V
  • Power - Max
    1 W
  • Frequency - Transition
    180MHz
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Package / Case
    TO-251-3 Short Leads, IPak, TO-251AA
  • Supplier Device Package
    TP

2SD1816T-E Request a Quote

In Stock 31135
Quantity:
Unit Price (Reference Price):
0.33000
Target price:
Total:0.33000

Datasheet