Specifications

• Series
  -
• Package
  Bulk
• Part Status
  Obsolete
• FET Type
  P-Channel
• Technology
  MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)
  50 V
• Current - Continuous Drain (Id) @ 25°C
  70mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On)
  1.5V, 4V
• Rds On (Max) @ Id, Vgs
  23Ohm @ 40mA, 4V
• Vgs(th) (Max) @ Id
  -
• Gate Charge (Qg) (Max) @ Vgs
  1.4 nC @ 10 V
• Vgs (Max)
  ±10V
• Input Capacitance (Ciss) (Max) @ Vds
  7.4 pF @ 10 V
• FET Feature
  -
• Power Dissipation (Max)
  250mW (Ta)
• Operating Temperature
  150°C (TJ)
• Mounting Type
  Surface Mount
• Supplier Device Package
  3-CP
• Package / Case
  TO-236-3, SC-59, SOT-23-3