AUIRFS4310Z-IR

AUIRFS4310Z-IR

Manufacturer

Rochester Electronics

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 100V 120A D2PAK

Specifications

  • Series
    Automotive, AEC-Q101, HEXFET®
  • Package
    Bulk
  • Part Status
    Active
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    100 V
  • Current - Continuous Drain (Id) @ 25°C
    120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    -
  • Rds On (Max) @ Id, Vgs
    6mOhm @ 75A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs
    170 nC @ 10 V
  • Vgs (Max)
    ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
    6860 pF @ 50 V
  • FET Feature
    -
  • Power Dissipation (Max)
    250W (Tc)
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Supplier Device Package
    D2PAK
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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In Stock 15207
Quantity:
Unit Price (Reference Price):
2.10000
Target price:
Total:2.10000