BCR119WH6327XTSA1

BCR119WH6327XTSA1

Manufacturer

Rochester Electronics

Product Category

Transistors - Bipolar (BJT) - Single, Pre-Biased

Description

BIPOLAR DIGITAL TRANSISTOR

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Last Time Buy
  • Transistor Type
    NPN - Pre-Biased
  • Current - Collector (Ic) (Max)
    100 mA
  • Voltage - Collector Emitter Breakdown (Max)
    50 V
  • Resistor - Base (R1)
    4.7 kOhms
  • Resistor - Emitter Base (R2)
    -
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    120 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Frequency - Transition
    150 MHz
  • Power - Max
    250 mW
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-70, SOT-323
  • Supplier Device Package
    PG-SOT323-3

BCR119WH6327XTSA1 Request a Quote

In Stock 500967
Quantity:
Unit Price (Reference Price):
0.02000
Target price:
Total:0.02000

Datasheet