BFP182WE6327

BFP182WE6327

Manufacturer

Rochester Electronics

Product Category

Transistors - Bipolar (BJT) - RF

Description

RF TRANSISTOR, L BAND, NPN

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Active
  • Transistor Type
    NPN
  • Voltage - Collector Emitter Breakdown (Max)
    12V
  • Frequency - Transition
    8GHz
  • Noise Figure (dB Typ @ f)
    0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
  • Gain
    22dB
  • Power - Max
    250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    70 @ 10mA, 8V
  • Current - Collector (Ic) (Max)
    35mA
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-82A, SOT-343
  • Supplier Device Package
    PG-SOT343-4

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In Stock 125817
Quantity:
Unit Price (Reference Price):
0.08000
Target price:
Total:0.08000