BFP740E6327

BFP740E6327

Manufacturer

Rochester Electronics

Product Category

Transistors - Bipolar (BJT) - RF

Description

RF TRANSISTOR, X BAND, NPN

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Active
  • Transistor Type
    NPN
  • Voltage - Collector Emitter Breakdown (Max)
    4.7V
  • Frequency - Transition
    42GHz
  • Noise Figure (dB Typ @ f)
    0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
  • Gain
    27dB
  • Power - Max
    160mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    160 @ 25mA, 3V
  • Current - Collector (Ic) (Max)
    30mA
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-82A, SOT-343
  • Supplier Device Package
    PG-SOT343-4

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In Stock 33239
Quantity:
Unit Price (Reference Price):
0.31000
Target price:
Total:0.31000