BFQ67W,115

BFQ67W,115

Manufacturer

Rochester Electronics

Product Category

Transistors - Bipolar (BJT) - RF

Description

RF SMALL SIGNAL TRANSISTOR

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Obsolete
  • Transistor Type
    NPN
  • Voltage - Collector Emitter Breakdown (Max)
    10V
  • Frequency - Transition
    8GHz
  • Noise Figure (dB Typ @ f)
    1.3dB ~ 3dB @ 1GHz ~ 2GHz
  • Gain
    -
  • Power - Max
    300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    60 @ 15mA, 5V
  • Current - Collector (Ic) (Max)
    50mA
  • Operating Temperature
    175°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-70, SOT-323
  • Supplier Device Package
    SOT-323-3

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In Stock 125817
Quantity:
Unit Price (Reference Price):
0.08000
Target price:
Total:0.08000

Datasheet