BSO211P

BSO211P

Manufacturer

Rochester Electronics

Product Category

Transistors - FETs, MOSFETs - Arrays

Description

P-CHANNEL POWER MOSFET

Specifications

  • Series
    OptiMOS™
  • Package
    Bulk
  • Part Status
    Active
  • FET Type
    2 P-Channel (Dual)
  • FET Feature
    Logic Level Gate
  • Drain to Source Voltage (Vdss)
    20V
  • Current - Continuous Drain (Id) @ 25°C
    4.7A
  • Rds On (Max) @ Id, Vgs
    67mOhm @ 4.7A, 4.5V
  • Vgs(th) (Max) @ Id
    1.2V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs
    23.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds
    920pF @ 15V
  • Power - Max
    2W
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package
    P-DSO-8

BSO211P Request a Quote

In Stock 35358
Quantity:
Unit Price (Reference Price):
0.29000
Target price:
Total:0.29000