Specifications

• Series
  NexFET™
• Package
  Bulk
• Part Status
  Active
• FET Type
  N-Channel
• Technology
  MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)
  25 V
• Current - Continuous Drain (Id) @ 25°C
  22A (Ta), 113A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)
  -
• Rds On (Max) @ Id, Vgs
  4.5mOhm @ 25A, 10V
• Vgs(th) (Max) @ Id
  2.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs
  8.9 nC @ 4.5 V
• Vgs (Max)
  +16V, -12V
• Input Capacitance (Ciss) (Max) @ Vds
  1300 pF @ 12.5 V
• FET Feature
  -
• Power Dissipation (Max)
  3.1W (Ta)
• Operating Temperature
  -55°C ~ 150°C (TJ)
• Mounting Type
  Surface Mount
• Supplier Device Package
  8-VSON-CLIP (5x6)
• Package / Case
  8-PowerTDFN