EFC6612R-TF

EFC6612R-TF

Manufacturer

Rochester Electronics

Product Category

Transistors - FETs, MOSFETs - Arrays

Description

N-CHANNEL, MOSFET

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Active
  • FET Type
    2 N-Channel (Dual) Common Drain
  • FET Feature
    Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss)
    -
  • Current - Continuous Drain (Id) @ 25°C
    -
  • Rds On (Max) @ Id, Vgs
    -
  • Vgs(th) (Max) @ Id
    -
  • Gate Charge (Qg) (Max) @ Vgs
    27nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds
    -
  • Power - Max
    2.5W
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    6-SMD, No Lead
  • Supplier Device Package
    6-CSP (1.77x3.54)

EFC6612R-TF Request a Quote

In Stock 29459
Quantity:
Unit Price (Reference Price):
0.35000
Target price:
Total:0.35000

Datasheet