EMF5XV6T5G

EMF5XV6T5G

Manufacturer

Rochester Electronics

Product Category

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Description

SMALL SIGNAL BIPOLAR TRANSISTOR,

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Active
  • Transistor Type
    1 NPN Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max)
    100mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max)
    50V, 12V
  • Resistor - Base (R1)
    47kOhms
  • Resistor - Emitter Base (R2)
    47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 5mA, 10V / 270 @ 10mA, 2V
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 300µA, 10mA / 250mV @ 10mA, 200mA
  • Current - Collector Cutoff (Max)
    500nA
  • Frequency - Transition
    -
  • Power - Max
    500mW
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-563, SOT-666
  • Supplier Device Package
    SOT-563

EMF5XV6T5G Request a Quote

In Stock 91854
Quantity:
Unit Price (Reference Price):
0.11000
Target price:
Total:0.11000

Datasheet