FD1000R17IE4BOSA2

FD1000R17IE4BOSA2

Manufacturer

Rochester Electronics

Product Category

Transistors - IGBTs - Modules

Description

FD1000R17 - IGBT MODULE

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Active
  • IGBT Type
    -
  • Configuration
    Single
  • Voltage - Collector Emitter Breakdown (Max)
    1.7 V
  • Current - Collector (Ic) (Max)
    -
  • Power - Max
    6.25 W
  • Vce(on) (Max) @ Vge, Ic
    2.45V @ 15V, 1000A
  • Current - Collector Cutoff (Max)
    5 mA
  • Input Capacitance (Cies) @ Vce
    81 nF @ 25 V
  • Input
    Standard
  • NTC Thermistor
    Yes
  • Operating Temperature
    -40°C ~ 150°C
  • Mounting Type
    Chassis Mount
  • Package / Case
    Module
  • Supplier Device Package
    Module

FD1000R17IE4BOSA2 Request a Quote

In Stock 930
Quantity:
Unit Price (Reference Price):
541.42000
Target price:
Total:541.42000

Datasheet