FDD2612

FDD2612

Manufacturer

Rochester Electronics

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 200V 4.9A TO252

Specifications

  • Series
    PowerTrench®
  • Package
    Bulk
  • Part Status
    Obsolete
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    200 V
  • Current - Continuous Drain (Id) @ 25°C
    4.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    720mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    11 nC @ 10 V
  • Vgs (Max)
    ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
    234 pF @ 100 V
  • FET Feature
    -
  • Power Dissipation (Max)
    42W (Ta)
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Supplier Device Package
    TO-252
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63

FDD2612 Request a Quote

In Stock 26949
Quantity:
Unit Price (Reference Price):
0.77000
Target price:
Total:0.77000

Datasheet