FDPC1012S

FDPC1012S

Manufacturer

Rochester Electronics

Product Category

Transistors - FETs, MOSFETs - Arrays

Description

POWER FIELD-EFFECT TRANSISTOR

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Active
  • FET Type
    2 N-Channel (Dual) Asymmetrical
  • FET Feature
    Standard
  • Drain to Source Voltage (Vdss)
    25V
  • Current - Continuous Drain (Id) @ 25°C
    13A (Ta), 35A (Tc), 26A (Ta), 88A (Tc)
  • Rds On (Max) @ Id, Vgs
    7mOhm @ 12A, 4.5V, 2.2mOhm @ 23A, 4.5V
  • Vgs(th) (Max) @ Id
    2.2V @ 250µA, 2.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs
    8nC, 25nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds
    1075pF @ 13V, 3456pF @ 13V
  • Power - Max
    800mW (Ta), 900mW (Ta)
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerWDFN
  • Supplier Device Package
    Powerclip-33

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In Stock 25878
Quantity:
Unit Price (Reference Price):
0.40000
Target price:
Total:0.40000