FJV3102RMTF

FJV3102RMTF

Manufacturer

Rochester Electronics

Product Category

Transistors - Bipolar (BJT) - Single, Pre-Biased

Description

0.1A, 50V, NPN

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Active
  • Transistor Type
    NPN - Pre-Biased
  • Current - Collector (Ic) (Max)
    100 mA
  • Voltage - Collector Emitter Breakdown (Max)
    50 V
  • Resistor - Base (R1)
    10 kOhms
  • Resistor - Emitter Base (R2)
    10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Frequency - Transition
    250 MHz
  • Power - Max
    200 mW
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package
    SOT-23-3 (TO-236)

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In Stock 334203
Quantity:
Unit Price (Reference Price):
0.03000
Target price:
Total:0.03000

Datasheet