FQB2P25TM

FQB2P25TM

Manufacturer

Rochester Electronics

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET P-CH 250V 2.3A D2PAK

Specifications

  • Series
    QFET®
  • Package
    Bulk
  • Part Status
    Obsolete
  • FET Type
    P-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    250 V
  • Current - Continuous Drain (Id) @ 25°C
    2.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    4Ohm @ 1.15A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    8.5 nC @ 10 V
  • Vgs (Max)
    ±30V
  • Input Capacitance (Ciss) (Max) @ Vds
    250 pF @ 25 V
  • FET Feature
    -
  • Power Dissipation (Max)
    3.13W (Ta), 52W (Tc)
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Supplier Device Package
    D²PAK (TO-263AB)
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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In Stock 33181
Quantity:
Unit Price (Reference Price):
0.31000
Target price:
Total:0.31000

Datasheet