FQU12N20TU

FQU12N20TU

Manufacturer

Rochester Electronics

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 200V 9A I-PAK

Specifications

  • Series
    QFET®
  • Package
    Bulk
  • Part Status
    Active
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    200 V
  • Current - Continuous Drain (Id) @ 25°C
    9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    280mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    23 nC @ 10 V
  • Vgs (Max)
    ±30V
  • Input Capacitance (Ciss) (Max) @ Vds
    910 pF @ 25 V
  • FET Feature
    -
  • Power Dissipation (Max)
    2.5W (Ta), 55W (Tc)
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Supplier Device Package
    I-PAK
  • Package / Case
    TO-251-3 Short Leads, IPak, TO-251AA

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In Stock 25231
Quantity:
Unit Price (Reference Price):
0.41000
Target price:
Total:0.41000

Datasheet