FW276-TL-2H

FW276-TL-2H

Manufacturer

Rochester Electronics

Product Category

Transistors - FETs, MOSFETs - Arrays

Description

POWER FIELD-EFFECT TRANSISTOR

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Obsolete
  • FET Type
    2 N-Channel (Dual)
  • FET Feature
    Logic Level Gate
  • Drain to Source Voltage (Vdss)
    450V
  • Current - Continuous Drain (Id) @ 25°C
    700mA
  • Rds On (Max) @ Id, Vgs
    12.1Ohm @ 350mA, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs
    3.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds
    55pF @ 20V
  • Power - Max
    1.6W
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package
    8-SOIC

FW276-TL-2H Request a Quote

In Stock 27909
Quantity:
Unit Price (Reference Price):
0.37000
Target price:
Total:0.37000

Datasheet