FZ1200R17HE4HOSA2

FZ1200R17HE4HOSA2

Manufacturer

Rochester Electronics

Product Category

Transistors - IGBTs - Modules

Description

FZ1200R17 - IGBT MODULE

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Active
  • IGBT Type
    -
  • Configuration
    Single Switch
  • Voltage - Collector Emitter Breakdown (Max)
    1.7 V
  • Current - Collector (Ic) (Max)
    1.2 A
  • Power - Max
    7.8 W
  • Vce(on) (Max) @ Vge, Ic
    2.3V @ 15V, 1200A
  • Current - Collector Cutoff (Max)
    5 mA
  • Input Capacitance (Cies) @ Vce
    97 nF @ 25 V
  • Input
    Standard
  • NTC Thermistor
    No
  • Operating Temperature
    -40°C ~ 150°C
  • Mounting Type
    Chassis Mount
  • Package / Case
    Module
  • Supplier Device Package
    Module

FZ1200R17HE4HOSA2 Request a Quote

In Stock 925
Quantity:
Unit Price (Reference Price):
624.44000
Target price:
Total:624.44000

Datasheet