Specifications

• Series
  -
• Package
  Bulk
• Part Status
  Active
• FET Type
  N-Channel
• Technology
  MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)
  30 V
• Current - Continuous Drain (Id) @ 25°C
  6.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On)
  -
• Rds On (Max) @ Id, Vgs
  31mOhm @ 3A, 10V
• Vgs(th) (Max) @ Id
  2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs
  -
• Vgs (Max)
  ±20V
• Input Capacitance (Ciss) (Max) @ Vds
  620 pF @ 10 V
• FET Feature
  -
• Power Dissipation (Max)
  1.05W (Ta)
• Operating Temperature
  150°C
• Mounting Type
  Surface Mount
• Supplier Device Package
  6-TSOP
• Package / Case
  SOT-23-6 Thin, TSOT-23-6