HGT1S10N120BNS

HGT1S10N120BNS

Manufacturer

Rochester Electronics

Product Category

Transistors - IGBTs - Single

Description

IGBT, 35A, 1200V, N-CHANNEL, TO-

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Active
  • IGBT Type
    NPT
  • Voltage - Collector Emitter Breakdown (Max)
    1.2 V
  • Current - Collector (Ic) (Max)
    35 A
  • Current - Collector Pulsed (Icm)
    80 A
  • Vce(on) (Max) @ Vge, Ic
    2.7V @ 15V, 10A
  • Power - Max
    298 W
  • Switching Energy
    320µJ (on), 800µJ (off)
  • Input Type
    Standard
  • Gate Charge
    100 nC
  • Td (on/off) @ 25°C
    23ns/165ns
  • Test Condition
    960V, 10A, 10Ohm, 15V
  • Reverse Recovery Time (trr)
    -
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package
    TO-263AB

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In Stock 9737
Quantity:
Unit Price (Reference Price):
3.43000
Target price:
Total:3.43000

Datasheet