IPA60R299CPXKSA1

IPA60R299CPXKSA1

Manufacturer

Rochester Electronics

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 600V 11A TO220-3-31

Specifications

  • Series
    CoolMOS™
  • Package
    Bulk
  • Part Status
    Active
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    600 V
  • Current - Continuous Drain (Id) @ 25°C
    11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    -
  • Rds On (Max) @ Id, Vgs
    299mOhm @ 6.6A, 10V
  • Vgs(th) (Max) @ Id
    3.5V @ 440µA
  • Gate Charge (Qg) (Max) @ Vgs
    29 nC @ 10 V
  • Vgs (Max)
    ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
    1100 pF @ 100 V
  • FET Feature
    -
  • Power Dissipation (Max)
    33W (Tc)
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Supplier Device Package
    PG-TO220-3-31 Full Pack
  • Package / Case
    TO-220-3 Full Pack

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In Stock 17081
Quantity:
Unit Price (Reference Price):
1.23000
Target price:
Total:1.23000

Datasheet