IPT65R105G7XTMA1

IPT65R105G7XTMA1

Manufacturer

Rochester Electronics

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 650V 24A HSOF-8-2

Specifications

  • Series
    CoolMOS™ C7
  • Package
    Bulk
  • Part Status
    Active
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    650 V
  • Current - Continuous Drain (Id) @ 25°C
    24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    105mOhm @ 8.9A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 440µA
  • Gate Charge (Qg) (Max) @ Vgs
    35 nC @ 10 V
  • Vgs (Max)
    ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
    1.67 pF @ 400 V
  • FET Feature
    -
  • Power Dissipation (Max)
    156W (Tc)
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Supplier Device Package
    PG-HSOF-8-2
  • Package / Case
    8-PowerSFN

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In Stock 11514
Quantity:
Unit Price (Reference Price):
2.83000
Target price:
Total:2.83000

Datasheet