Specifications

• Series
  HEXFET®
• Package
  Tube
• Part Status
  Obsolete
• FET Type
  N and P-Channel
• FET Feature
  Standard
• Drain to Source Voltage (Vdss)
  30V
• Current - Continuous Drain (Id) @ 25°C
  -
• Rds On (Max) @ Id, Vgs
  29mOhm @ 5.8A, 10V
• Vgs(th) (Max) @ Id
  1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs
  33nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds
  650pF @ 25V
• Power - Max
  2W
• Operating Temperature
  -55°C ~ 150°C (TJ)
• Mounting Type
  Surface Mount
• Package / Case
  8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package
  8-SO