IRGB4715DPBF

IRGB4715DPBF

Manufacturer

Rochester Electronics

Product Category

Transistors - IGBTs - Single

Description

IGBT WITH RECOVERY DIODE

Specifications

  • Series
    -
  • Package
    Tube
  • Part Status
    Obsolete
  • IGBT Type
    -
  • Voltage - Collector Emitter Breakdown (Max)
    650 V
  • Current - Collector (Ic) (Max)
    21 A
  • Current - Collector Pulsed (Icm)
    24 A
  • Vce(on) (Max) @ Vge, Ic
    2V @ 15V, 8A
  • Power - Max
    100 W
  • Switching Energy
    200µJ (on), 90µJ (off)
  • Input Type
    Standard
  • Gate Charge
    30 nC
  • Td (on/off) @ 25°C
    30ns/100ns
  • Test Condition
    400V, 8A, 50Ohm, 15V
  • Reverse Recovery Time (trr)
    -
  • Operating Temperature
    -40°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Supplier Device Package
    TO-220AB

IRGB4715DPBF Request a Quote

In Stock 18756
Quantity:
Unit Price (Reference Price):
1.12000
Target price:
Total:1.12000

Datasheet