IRGP6640D-EPBF

IRGP6640D-EPBF

Manufacturer

Rochester Electronics

Product Category

Transistors - IGBTs - Single

Description

IGBT WITH RECOVERY DIODE

Specifications

  • Series
    -
  • Package
    Tube
  • Part Status
    Obsolete
  • IGBT Type
    -
  • Voltage - Collector Emitter Breakdown (Max)
    600 V
  • Current - Collector (Ic) (Max)
    53 A
  • Current - Collector Pulsed (Icm)
    72 A
  • Vce(on) (Max) @ Vge, Ic
    1.95V @ 15V, 24A
  • Power - Max
    200 W
  • Switching Energy
    90µJ (on), 600µJ (off)
  • Input Type
    Standard
  • Gate Charge
    50 nC
  • Td (on/off) @ 25°C
    40ns/100ns
  • Test Condition
    400V, 24A, 10Ohm, 15V
  • Reverse Recovery Time (trr)
    70 ns
  • Operating Temperature
    -40°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Supplier Device Package
    TO-247AD

IRGP6640D-EPBF Request a Quote

In Stock 13185
Quantity:
Unit Price (Reference Price):
2.45000
Target price:
Total:2.45000

Datasheet