IRGP6650D-EPBF

IRGP6650D-EPBF

Manufacturer

Rochester Electronics

Product Category

Transistors - IGBTs - Single

Description

IGBT WITH RECOVERY DIODE

Specifications

  • Series
    -
  • Package
    Tube
  • Part Status
    Obsolete
  • IGBT Type
    -
  • Voltage - Collector Emitter Breakdown (Max)
    600 V
  • Current - Collector (Ic) (Max)
    80 A
  • Current - Collector Pulsed (Icm)
    105 A
  • Vce(on) (Max) @ Vge, Ic
    1.95V @ 15V, 35A
  • Power - Max
    306 W
  • Switching Energy
    300µJ (on), 630µJ (off)
  • Input Type
    Standard
  • Gate Charge
    75 nC
  • Td (on/off) @ 25°C
    40ns/105ns
  • Test Condition
    400V, 35A, 10Ohm, 15V
  • Reverse Recovery Time (trr)
    50 ns
  • Operating Temperature
    -40°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Supplier Device Package
    TO-247AD

IRGP6650D-EPBF Request a Quote

In Stock 11749
Quantity:
Unit Price (Reference Price):
2.76000
Target price:
Total:2.76000

Datasheet