IRGR2B60KDPBF

IRGR2B60KDPBF

Manufacturer

Rochester Electronics

Product Category

Transistors - IGBTs - Single

Description

IGBT WITH RECOVERY DIODE

Specifications

  • Series
    -
  • Package
    Tube
  • Part Status
    Obsolete
  • IGBT Type
    -
  • Voltage - Collector Emitter Breakdown (Max)
    600 V
  • Current - Collector (Ic) (Max)
    6.3 A
  • Current - Collector Pulsed (Icm)
    8 A
  • Vce(on) (Max) @ Vge, Ic
    2.25V @ 15V, 2A
  • Power - Max
    35 W
  • Switching Energy
    74µJ (on), 39µJ (off)
  • Input Type
    Standard
  • Gate Charge
    12 nC
  • Td (on/off) @ 25°C
    11ns/150ns
  • Test Condition
    400V, 2A, 100Ohm, 15V
  • Reverse Recovery Time (trr)
    45 ns
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package
    D-Pak

IRGR2B60KDPBF Request a Quote

In Stock 30317
Quantity:
Unit Price (Reference Price):
0.68000
Target price:
Total:0.68000

Datasheet