MAT02EH

MAT02EH

Manufacturer

Rochester Electronics

Product Category

Transistors - Bipolar (BJT) - Arrays

Description

MATCHED DUAL NPN TRANSISTOR

Specifications

  • Series
    -
  • Package
    Tube
  • Part Status
    Obsolete
  • Transistor Type
    2 NPN (Dual)
  • Current - Collector (Ic) (Max)
    20mA
  • Voltage - Collector Emitter Breakdown (Max)
    40V
  • Vce Saturation (Max) @ Ib, Ic
    100mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max)
    3nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    -
  • Power - Max
    1.8W
  • Frequency - Transition
    200MHz
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Package / Case
    TO-78-6 Metal Can
  • Supplier Device Package
    TO-78-6

MAT02EH Request a Quote

In Stock 3808
Quantity:
Unit Price (Reference Price):
17.30000
Target price:
Total:17.30000