Specifications

• Series
  -
• Package
  Bulk
• Part Status
  Active
• FET Type
  P-Channel
• Technology
  MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)
  16 V
• Current - Continuous Drain (Id) @ 25°C
  1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On)
  -
• Rds On (Max) @ Id, Vgs
  450mOhm @ 100mA, 10V
• Vgs(th) (Max) @ Id
  1.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs
  -
• Vgs (Max)
  ±16V
• Input Capacitance (Ciss) (Max) @ Vds
  100 pF @ 12 V
• FET Feature
  -
• Power Dissipation (Max)
  568mW (Ta)
• Operating Temperature
  -55°C ~ 150°C (TJ)
• Mounting Type
  Surface Mount
• Supplier Device Package
  SOT-143
• Package / Case
  TO-253-4, TO-253AA