MJD112-1G

MJD112-1G

Manufacturer

Rochester Electronics

Product Category

Transistors - Bipolar (BJT) - Single

Description

POWER BIPOLAR TRANSISTOR, 2A, 10

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Active
  • Transistor Type
    NPN - Darlington
  • Current - Collector (Ic) (Max)
    2 A
  • Voltage - Collector Emitter Breakdown (Max)
    100 V
  • Vce Saturation (Max) @ Ib, Ic
    3V @ 40mA, 4A
  • Current - Collector Cutoff (Max)
    20µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    1000 @ 2A, 3V
  • Power - Max
    1.75 W
  • Frequency - Transition
    25MHz
  • Operating Temperature
    -65°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Package / Case
    TO-251-3 Short Leads, IPak, TO-251AA
  • Supplier Device Package
    I-PAK

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In Stock 44423
Quantity:
Unit Price (Reference Price):
0.23000
Target price:
Total:0.23000

Datasheet