MMBFJ177LT1G

MMBFJ177LT1G

Manufacturer

Rochester Electronics

Product Category

Transistors - JFETs

Description

SMALL SIGNAL FIELD-EFFECT TRANSI

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Active
  • FET Type
    P-Channel
  • Voltage - Breakdown (V(BR)GSS)
    30 V
  • Drain to Source Voltage (Vdss)
    -
  • Current - Drain (Idss) @ Vds (Vgs=0)
    1.5 mA @ 15 V
  • Current Drain (Id) - Max
    -
  • Voltage - Cutoff (VGS off) @ Id
    800 mV @ 10 nA
  • Input Capacitance (Ciss) (Max) @ Vds
    11pF @ 10V (VGS)
  • Resistance - RDS(On)
    300 Ohms
  • Power - Max
    225 mW
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package
    SOT-23-3 (TO-236)

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In Stock 84173
Quantity:
Unit Price (Reference Price):
0.12000
Target price:
Total:0.12000

Datasheet