MMBTH10LT3G

MMBTH10LT3G

Manufacturer

Rochester Electronics

Product Category

Transistors - Bipolar (BJT) - RF

Description

RF SMALL SIGNAL BIPOLAR TRANSIST

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Active
  • Transistor Type
    NPN
  • Voltage - Collector Emitter Breakdown (Max)
    25V
  • Frequency - Transition
    650MHz
  • Noise Figure (dB Typ @ f)
    -
  • Gain
    -
  • Power - Max
    225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    60 @ 4mA, 10V
  • Current - Collector (Ic) (Max)
    -
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package
    SOT-23-3 (TO-236)

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In Stock 334188
Quantity:
Unit Price (Reference Price):
0.03000
Target price:
Total:0.03000

Datasheet