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MPSH10
Manufacturer
Product Category
Transistors - Bipolar (BJT) - RF
Description
RF SMALL SIGNAL TRANSISTOR
RFQ Email: [email protected] or Inquires online
Specifications
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Series-
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PackageBulk
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Part StatusObsolete
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Transistor TypeNPN
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Voltage - Collector Emitter Breakdown (Max)25V
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Frequency - Transition650MHz
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Noise Figure (dB Typ @ f)-
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Gain-
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Power - Max350mW
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DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 4mA, 10V
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Current - Collector (Ic) (Max)-
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Operating Temperature-65°C ~ 150°C (TJ)
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Mounting TypeThrough Hole
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Package / Case-
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Supplier Device Package-
