NDS8961

NDS8961

Manufacturer

Rochester Electronics

Product Category

Transistors - FETs, MOSFETs - Arrays

Description

N-CHANNEL POWER MOSFET

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Obsolete
  • FET Type
    2 N-Channel (Dual)
  • FET Feature
    Logic Level Gate
  • Drain to Source Voltage (Vdss)
    30V
  • Current - Continuous Drain (Id) @ 25°C
    3.1A
  • Rds On (Max) @ Id, Vgs
    100mOhm @ 3.1A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds
    190pF @ 15V
  • Power - Max
    900mW
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package
    8-SOIC

NDS8961 Request a Quote

In Stock 22195
Quantity:
Unit Price (Reference Price):
0.47000
Target price:
Total:0.47000

Datasheet