NESG3031M14-T3-A

NESG3031M14-T3-A

Manufacturer

Rochester Electronics

Product Category

Transistors - Bipolar (BJT) - RF

Description

RF SMALL SIGNAL TRANSISTOR

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Obsolete
  • Transistor Type
    NPN
  • Voltage - Collector Emitter Breakdown (Max)
    4.3V
  • Frequency - Transition
    -
  • Noise Figure (dB Typ @ f)
    0.6dB ~ 1.5dB @ 2.4GHz ~ 5.8GHz
  • Gain
    7.5dB ~ 16dB
  • Power - Max
    150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    220 @ 6mA, 2V
  • Current - Collector (Ic) (Max)
    35mA
  • Operating Temperature
    -
  • Mounting Type
    Surface Mount
  • Package / Case
    4-SMD, Flat Leads
  • Supplier Device Package
    4L2MM, M14

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In Stock 38676
Quantity:
Unit Price (Reference Price):
0.53000
Target price:
Total:0.53000