NGB8206NT4G

NGB8206NT4G

Manufacturer

Rochester Electronics

Product Category

Transistors - IGBTs - Single

Description

INSULATED GATE BIPOLAR TRANSISTO

Specifications

  • Series
    *
  • Package
    Bulk
  • Part Status
    Obsolete
  • IGBT Type
    -
  • Voltage - Collector Emitter Breakdown (Max)
    390 V
  • Current - Collector (Ic) (Max)
    20 A
  • Current - Collector Pulsed (Icm)
    -
  • Vce(on) (Max) @ Vge, Ic
    1.9V @ 4.5V, 20A
  • Power - Max
    150 W
  • Switching Energy
    -
  • Input Type
    Logic
  • Gate Charge
    -
  • Td (on/off) @ 25°C
    -
  • Test Condition
    -
  • Reverse Recovery Time (trr)
    -
  • Operating Temperature
    -
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package
    D2PAK

NGB8206NT4G Request a Quote

In Stock 19264
Quantity:
Unit Price (Reference Price):
1.09000
Target price:
Total:1.09000

Datasheet