NGTB10N60R2DT4G

NGTB10N60R2DT4G

Manufacturer

Rochester Electronics

Product Category

Transistors - IGBTs - Single

Description

INSULATED GATE BIPOLAR TRANSISTO

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Active
  • IGBT Type
    -
  • Voltage - Collector Emitter Breakdown (Max)
    600 V
  • Current - Collector (Ic) (Max)
    20 A
  • Current - Collector Pulsed (Icm)
    40 A
  • Vce(on) (Max) @ Vge, Ic
    2.1V @ 15V, 10A
  • Power - Max
    72 W
  • Switching Energy
    412µJ (on), 140µJ (off)
  • Input Type
    Standard
  • Gate Charge
    53 nC
  • Td (on/off) @ 25°C
    48ns/120ns
  • Test Condition
    300V, 10A, 30Ohm, 15V
  • Reverse Recovery Time (trr)
    90 ns
  • Operating Temperature
    175°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package
    DPAK

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In Stock 35456
Quantity:
Unit Price (Reference Price):
0.58000
Target price:
Total:0.58000

Datasheet