NJX1675PDR2G

NJX1675PDR2G

Manufacturer

Rochester Electronics

Product Category

Transistors - Bipolar (BJT) - Arrays

Description

POWER BIPOLAR TRANSISTOR, PNP

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Obsolete
  • Transistor Type
    NPN, PNP
  • Current - Collector (Ic) (Max)
    3A
  • Voltage - Collector Emitter Breakdown (Max)
    30V
  • Vce Saturation (Max) @ Ib, Ic
    115mV @ 200mA, 2A, 170mV @ 200mA, 2A
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    180 @ 1A, 2V
  • Power - Max
    2W
  • Frequency - Transition
    100MHz, 120MHz
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package
    8-SOIC

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In Stock 50889
Quantity:
Unit Price (Reference Price):
0.20000
Target price:
Total:0.20000

Datasheet