NSBA114EDXV6T5

NSBA114EDXV6T5

Manufacturer

Rochester Electronics

Product Category

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Description

SMALL SIGNAL BIPOLAR TRANSISTOR

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Obsolete
  • Transistor Type
    2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max)
    100mA
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Resistor - Base (R1)
    10kOhms
  • Resistor - Emitter Base (R2)
    10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    35 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max)
    500nA
  • Frequency - Transition
    -
  • Power - Max
    500mW
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-563, SOT-666
  • Supplier Device Package
    SOT-563

NSBA114EDXV6T5 Request a Quote

In Stock 250898
Quantity:
Unit Price (Reference Price):
0.04000
Target price:
Total:0.04000

Datasheet