NSBA115TF3T5G

NSBA115TF3T5G

Manufacturer

Rochester Electronics

Product Category

Transistors - Bipolar (BJT) - Single, Pre-Biased

Description

SMALL SIGNAL BIPOLAR TRANSISTOR,

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Active
  • Transistor Type
    PNP - Pre-Biased
  • Current - Collector (Ic) (Max)
    100 mA
  • Voltage - Collector Emitter Breakdown (Max)
    50 V
  • Resistor - Base (R1)
    100 kOhms
  • Resistor - Emitter Base (R2)
    -
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max)
    500nA
  • Frequency - Transition
    -
  • Power - Max
    254 mW
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-1123
  • Supplier Device Package
    SOT-1123

NSBA115TF3T5G Request a Quote

In Stock 125862
Quantity:
Unit Price (Reference Price):
0.08000
Target price:
Total:0.08000

Datasheet