NSM11156DW6T1G

NSM11156DW6T1G

Manufacturer

Rochester Electronics

Product Category

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Description

SMALL SIGNAL BIPOLAR TRANSISTOR

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Obsolete
  • Transistor Type
    1 PNP Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max)
    100mA
  • Voltage - Collector Emitter Breakdown (Max)
    50V, 65V
  • Resistor - Base (R1)
    10kOhms
  • Resistor - Emitter Base (R2)
    10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    35 @ 5mA, 10V / 220 @ 2mA, 5V
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 300µA, 10mA / 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max)
    500nA
  • Frequency - Transition
    -
  • Power - Max
    230mW
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Supplier Device Package
    SC-88/SC70-6/SOT-363

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In Stock 500946
Quantity:
Unit Price (Reference Price):
0.02000
Target price:
Total:0.02000

Datasheet